IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip
Kategorie:
IGBT-Leistungsmodul
Preis:
Negotiable
Zahlungs-Methode:
T/T, D/P, D/A, L/C, Western Union, MoneyGram
Spezifikationen
Produkt-Modell:
NGTB40N120SWG
Lieferanten-Paket:
TO-247-3
Kurzbeschreibung:
Bipolartransistor mit isoliertem Gate
Produkt-Kategorie:
IGBT-Leistungsmodul
Verwendungsgebiete:
Schweißen
Herstelldatum:
Innerhalb eines Jahres
Markieren:
NGTB40N120SWG
,IGBT Power Transistors
Einleitung
Product Range
- Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip
App Characteristics
- TJmax = 175°C • Soft Fast Reverse Recovery Diode
- Optimized for High Speed Switching
- 10 us Short Circuit Capability
- These are Pb−Free Devices
Basic Data
| Product Attribute | Attribute Value |
|---|---|
| onsemi | |
| Product Category: | IGBT Transistors |
| RoHS: | Details |
| Si | |
| TO-247-3 | |
| Through Hole | |
| Single | |
| 1.2 kV | |
| 2 V | |
| 20 V | |
| 80 A | |
| 535 W | |
| - 55 C | |
| + 175 C | |
| Tube | |
| Brand: | onsemi |
| Continuous Collector Current Ic Max: | 40 A |
| Gate-Emitter Leakage Current: | 200 nA |
| Product Type: | IGBT Transistors |
| 30 | |
| Subcategory: | IGBTs |
| Unit Weight: | 1.340411 oz |
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Application
- Widely used in stage, concert, network communication,Smartphones Tablets Laptops Notebooks Power Adapters Cameras Dongle
Order Process
| Add Parts to RFQ form | Submit RFQ | We reply within 24 hours |
| You confirm order | Payment | Ship out your order |
Chip Diagram
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Lagerbestand:
MOQ:
Negotiable