FDP047AN08A0 Field Effect Transistor Transistors FETs MOSFETs Single
Kategorie:
Feldeffekttransistor
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
FDP047AN08A0
Hersteller:
Fairchild-/ONhalbleiter
Beschreibung:
MOSFET N-CH 75V 80A TO-220AB
Kategorie:
Transistoren - FETs, MOSFETs - einzeln
Familie:
Transistoren - FETs, MOSFETs - einzeln
Reihe:
PowerTrench®
Einleitung
FDP047AN08A0 Specifications
| Part Status | Not For New Designs |
|---|---|
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 75V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 138nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 80A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220-3 |
| Package / Case | TO-220-3 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
FDP047AN08A0 Packaging
Detection
Senden Sie RFQ
Lagerbestand:
MOQ:
Negotiable