APT65GP60B2G IGBT Power Module Transistors IGBTs Single
Kategorie:
IGBT-Leistungsmodul
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
APT65GP60B2G
Hersteller:
Microsemi Corporation
Beschreibung:
IGBT 600V 100A 833W TMAX
Kategorie:
Transistoren - IGBTs - einzeln
Familie:
Transistoren - IGBTs - einzeln
Reihe:
ENERGIE-MOS 7®
Einleitung
APT65GP60B2G Specifications
| Part Status | Not For New Designs |
|---|---|
| IGBT Type | PT |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 100A |
| Current - Collector Pulsed (Icm) | 250A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 65A |
| Power - Max | 833W |
| Switching Energy | 605µJ (on), 896µJ (off) |
| Input Type | Standard |
| Gate Charge | 210nC |
| Td (on/off) @ 25°C | 30ns/91ns |
| Test Condition | 400V, 65A, 5 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 Variant |
| Supplier Device Package | - |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
APT65GP60B2G Packaging
Detection
Senden Sie RFQ
Lagerbestand:
MOQ:
Negotiable