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APT75GN120LG IGBT Power Module Transistors IGBTs Single

Kategorie:
IGBT-Leistungsmodul
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
APT75GN120LG
Hersteller:
Microsemi Corporation
Beschreibung:
IGBT 1200V 200A 833W TO264
Kategorie:
Transistoren - IGBTs - einzeln
Familie:
Transistoren - IGBTs - einzeln
Einleitung

APT75GN120LG Specifications

Part Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 200A
Current - Collector Pulsed (Icm) 225A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A
Power - Max 833W
Switching Energy 8620µJ (on), 11400µJ (off)
Input Type Standard
Gate Charge 425nC
Td (on/off) @ 25°C 60ns/620ns
Test Condition 800V, 75A, 1 Ohm, 15V
Reverse Recovery Time (trr) -
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Supplier Device Package TO-264 [L]
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

APT75GN120LG Packaging

Detection

APT75GN120LG IGBT Power Module Transistors IGBTs SingleAPT75GN120LG IGBT Power Module Transistors IGBTs SingleAPT75GN120LG IGBT Power Module Transistors IGBTs SingleAPT75GN120LG IGBT Power Module Transistors IGBTs Single

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Lagerbestand:
MOQ:
Negotiable