IRG7CH75K10EF-R IGBT Power Module Transistors IGBTs Single
Kategorie:
IGBT-Leistungsmodul
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
IRG7CH75K10EF-R
Hersteller:
Infineon Technologies
Beschreibung:
ULTRASCHNELLE IGBT 1200V STERBEN
Kategorie:
Transistoren - IGBTs - einzeln
Familie:
Transistoren - IGBTs - einzeln
Einleitung
IRG7CH75K10EF-R Specifications
| Part Status | Obsolete |
|---|---|
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | - |
| Current - Collector Pulsed (Icm) | - |
| Vce(on) (Max) @ Vge, Ic | 1.53V @ 15V, 20A |
| Power - Max | - |
| Switching Energy | - |
| Input Type | Standard |
| Gate Charge | 500nC |
| Td (on/off) @ 25°C | 120ns/445ns |
| Test Condition | 600V, 100A, 5 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Die |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
IRG7CH75K10EF-R Packaging
Detection
Senden Sie RFQ
Lagerbestand:
MOQ:
Negotiable