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IRG8CH29K10D IGBT Power Module Transistors IGBTs Single

Kategorie:
IGBT-Leistungsmodul
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
IRG8CH29K10D
Hersteller:
Infineon Technologies
Beschreibung:
ULTRASCHNELLE IGBT 1200V STERBEN
Kategorie:
Transistoren - IGBTs - einzeln
Familie:
Transistoren - IGBTs - einzeln
Reihe:
*
Einleitung

IRG8CH29K10D Specifications

Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) -
Current - Collector (Ic) (Max) -
Current - Collector Pulsed (Icm) -
Vce(on) (Max) @ Vge, Ic -
Power - Max -
Switching Energy -
Input Type -
Gate Charge -
Td (on/off) @ 25°C -
Test Condition -
Reverse Recovery Time (trr) -
Operating Temperature -
Mounting Type -
Package / Case -
Supplier Device Package -
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRG8CH29K10D Packaging

Detection

IRG8CH29K10D IGBT Power Module Transistors IGBTs SingleIRG8CH29K10D IGBT Power Module Transistors IGBTs SingleIRG8CH29K10D IGBT Power Module Transistors IGBTs SingleIRG8CH29K10D IGBT Power Module Transistors IGBTs Single

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Lagerbestand:
MOQ:
Negotiable