FDMB3800N Field Effect Transistor Transistors FETs MOSFETs Arrays
Spezifikationen
Teilnummer:
FDMB3800N
Hersteller:
Fairchild-/ONhalbleiter
Beschreibung:
MOSFET 2N-CH 30V 4.8A MICROFET
Kategorie:
Transistoren - FETs, MOSFETs - Reihen
Familie:
Transistoren - FETs, MOSFETs - Reihen
Reihe:
PowerTrench®
Einleitung
FDMB3800N Specifications
Part Status | Active |
---|---|
FET Type | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 4.8A |
Rds On (Max) @ Id, Vgs | 40 mOhm @ 4.8A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 465pF @ 15V |
Power - Max | 750mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-PowerWDFN |
Supplier Device Package | 8-MLP, MicroFET (3x1.9) |
Shipment | UPS/EMS/DHL/FedEx Express. |
Condtion | New original factory. |
FDMB3800N Packaging
Detection
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Lagerbestand:
MOQ:
Negotiable