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FDC6305N Field Effect Transistor Transistors FETs MOSFETs Arrays

Kategorie:
Feldeffekttransistor
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
FDC6305N
Hersteller:
Fairchild-/ONhalbleiter
Beschreibung:
MOSFET 2N-CH 20V 2.7A SSOT6
Kategorie:
Transistoren - FETs, MOSFETs - Reihen
Familie:
Transistoren - FETs, MOSFETs - Reihen
Reihe:
PowerTrench®
Einleitung

FDC6305N Specifications

Part Status Active
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.7A
Rds On (Max) @ Id, Vgs 80 mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 310pF @ 10V
Power - Max 700mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package SuperSOT™-6
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

FDC6305N Packaging

Detection

FDC6305N Field Effect Transistor Transistors FETs MOSFETs ArraysFDC6305N Field Effect Transistor Transistors FETs MOSFETs ArraysFDC6305N Field Effect Transistor Transistors FETs MOSFETs ArraysFDC6305N Field Effect Transistor Transistors FETs MOSFETs Arrays

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Lagerbestand:
MOQ:
Negotiable