NTJD1155LT1G Field Effect Transistor Transistors FETs MOSFETs Arrays
Kategorie:
Feldeffekttransistor
Preis:
verhandelbar
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
NTJD1155LT1G
Hersteller:
AUF Halbleiter
Beschreibung:
MOSFET N/P-CH 8V 1.3A SOT-363
Kategorie:
Transistoren - FETs, MOSFETs - Reihen
Familie:
Transistoren - FETs, MOSFETs - Reihen
Einleitung
NTJD1155LT1G Specifications
| Part Status | Active |
|---|---|
| FET Type | N and P-Channel |
| FET Feature | Standard |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 1.3A |
| Rds On (Max) @ Id, Vgs | 175 mOhm @ 1.2A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Power - Max | 400mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SC-88/SC70-6/SOT-363 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
NTJD1155LT1G Packaging
Detection
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Lagerbestand:
MOQ:
Negotiable