DMN3190LDW-13 Field Effect Transistor Transistors FETs MOSFETs Arrays
Kategorie:
Feldeffekttransistor
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
DMN3190LDW-13
Hersteller:
Dioden enthalten
Beschreibung:
MOSFET 2N-CH 30V 1A SOT363
Kategorie:
Transistoren - FETs, MOSFETs - Reihen
Familie:
Transistoren - FETs, MOSFETs - Reihen
Einleitung
DMN3190LDW-13 Specifications
| Part Status | Active |
|---|---|
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1A |
| Rds On (Max) @ Id, Vgs | 190 mOhm @ 1.3A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 87pF @ 20V |
| Power - Max | 320mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SOT-363 |
| Shipment | UPS/EMS/DHL/FedEx Express. |
| Condtion | New original factory. |
DMN3190LDW-13 Packaging
Detection
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Lagerbestand:
MOQ:
Negotiable