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IRF9956PBF Field Effect Transistor Transistors FETs MOSFETs Arrays

Kategorie:
Feldeffekttransistor
Preis:
Negotiable
Zahlungs-Methode:
T/T, L/C, D/A, D/P, T/T, Western Union, MoneyGram
Spezifikationen
Teilnummer:
IRF9956PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET 2N-CH 30V 3.5A 8-SOIC
Kategorie:
Transistoren - FETs, MOSFETs - Reihen
Familie:
Transistoren - FETs, MOSFETs - Reihen
Reihe:
HEXFET®
Einleitung

IRF9956PBF Specifications

Part Status Discontinued at Digi-Key
FET Type 2 N-Channel (Dual)
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3.5A
Rds On (Max) @ Id, Vgs 100 mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 190pF @ 15V
Power - Max 2W
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SO
Shipment UPS/EMS/DHL/FedEx Express.
Condtion New original factory.

IRF9956PBF Packaging

Detection

IRF9956PBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF9956PBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF9956PBF Field Effect Transistor Transistors FETs MOSFETs ArraysIRF9956PBF Field Effect Transistor Transistors FETs MOSFETs Arrays

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Lagerbestand:
MOQ:
Negotiable